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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA1359
DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25ae PD Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature -55 10 150 +150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -5 -3 -1 1.5 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA1359
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-40
V
VCEsat VBE
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-2V
-0.8
V
Base-emitter on voltage
-1.0
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-0.1
|I
A
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
|I
A
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
80
240
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
25
Cob fT
Output capacitance
IE=0 ; VCB=-10V f=1MHz IC=-0.5A ; VCE=-2V
35
pF
Transition frequency
100
MHz
hFE-1 Classifications O 80-160 Y 120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1359
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1359
4


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